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Matched Target-Resist Combination for Plasma Lithography

IP.com Disclosure Number: IPCOM000057898D
Original Publication Date: 1988-Jul-01
Included in the Prior Art Database: 2005-Feb-15

Publishing Venue

IBM

Related People

Authors:
Basu, S [+details]

Abstract

Energy absorption of resists in laser plasma lithography is optimized by matching the absorption spectrum of the resist with the emitted soft X-ray spectrum of the target material. Polymers, such as poly 2,3-dibromo-1-propyl alkylate containing beryllium, having an absortion wavelength of 7.75 Ao and 7.98 Ao, closely match the emitted wavelengths of 7.96 Ao and 8.34 Ao from an aluminum target radiated with a high powered laser at 1011-1015 watts per square centimeter. Other suitable target materials are germanium at 9.58 Ao and 9.64 Ao, selenium at 8.32 Ao, 8.73 Ao and 8.99 Ao, and arsenic at 8.92 Ao, 9.41 Ao and 9.67 Ao . Both positive and negative resists containing beryllium can be used with these target materials.