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Trench Self-Aligned Nitride Capacitors for Semiconductor Applications Disclosure Number: IPCOM000057904D
Original Publication Date: 1988-Jul-01
Included in the Prior Art Database: 2005-Feb-15

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Arienzo, M [+details]


A technique is described whereby the method of producing trench capacitors is improved through the use of a masking process to form self-aligned nitride oxide films. The process is an improvement over conventional methods of producing trench capacitors, which are hampered by the deleterious effects of undesired doping in critical structural areas of the device. Through the use of nitride films, this improvement to the process completely prevents the undesirable effects caused by dopant applications during subsequent processes in the production of semiconductors. Trench capacitors are typically used in multi-megabit dynamic random-access memory devices (DRAMs) to reduce cell size and, in the case of bipolar technologies, to isolate subcollectors.