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Selective Silicon Epitaxial Growth

IP.com Disclosure Number: IPCOM000057913D
Original Publication Date: 1988-Jul-01
Included in the Prior Art Database: 2005-Feb-15

Publishing Venue

IBM

Related People

Authors:
D'Agostino, MM Ginsberg, BJ Mader, SR [+details]

Abstract

Good quality epitaxial growth of silicon can be achieved without the use of hydrogenchloride gas and at a temperature of less than 1000oC by carrying out the chemical vapor deposition at a reduced pressure of approximately 80 Torr. This technique is especially beneficial for filling isolation trenches and producing an epitaxial layer over oxide-capped trench capacitors. When filling trenches, the channel stop doping within the trench can be etched by the hydrochlorine gas before silicon deposition starts. For depositing an epitaxial layer over the capacitors with a silicon chloride process, the lower processing temperature of approximately 950oC avoids out-diffusion of the boron dopant in the capacitors.