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Thermally Stable Schottky-Barrier and Ohmic Contacts for Silicon Integrated Circuits

IP.com Disclosure Number: IPCOM000057917D
Original Publication Date: 1988-Jul-01
Included in the Prior Art Database: 2005-Feb-15

Publishing Venue

IBM

Related People

Authors:
Aboelfotoh, MO [+details]

Abstract

Thermally stable Schottky-barrier and ohmic contacts for silicon integrated circuits are provided, and comprise either a titanium- tantalum or a hafnium-tantalum alloy which may be deposited and annealed on the silicon surface. When either of the provided alloys are annealed on the silicon, the barrier height remains relatively constant (change of approximately .01 eV) regardless of increases in the annealing temperature and length of the annealing process. Hence, a product with a more stable thermo-electrical characteristic results. The provided alloys are in contrast to the titanium-tungsten alloy of the art which can conceivably exhibit a barrier height change of approximately .12 eV when annealing at temperatures of 400 to 500 degrees C.