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TixWy ALLOYS CONTACTS TO HYDROGENATED AMORPHOUS SILICON

IP.com Disclosure Number: IPCOM000057934D
Original Publication Date: 1988-Jul-01
Included in the Prior Art Database: 2005-Feb-15

Publishing Venue

IBM

Related People

Authors:
Aboelfotoh, MO Kanicki, J [+details]

Abstract

A direct ohmic or/and quasi-ohmic contact to undoped and n-type doped hydrogenated amorphous silicon (a-Si:H) films can be achieved by using TixWy alloys. The WyTix alloys were deposited by magnetron sputtering in order to realize the following interface: WyTi/a-Si:H. The a-Si:H can be prepared by various techniques, such as HOMOCVD, CVD, PECVD or sputtering. The very good thermal stability (the reactivity of Ti is suppressed by alloying Ti with W) of this contact is the main advantage. This contact can be used in the variety of electronic devices involving a-Si:H films, e.g., TFTs, Schottky diodes or p-i-n junctions. Furthermore, the quality of this contact can be improved by incorporating a highly doped interface layer between the alloy and a-Si:H film.