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Quality Control for Silicon Lithography Mask Membranes

IP.com Disclosure Number: IPCOM000057966D
Original Publication Date: 1988-Aug-01
Included in the Prior Art Database: 2005-Feb-15

Publishing Venue

IBM

Related People

Authors:
Schroeder, H Tam, AC Zapka, W [+details]

Abstract

The proposal refers to measuring the homogeneity of doping and the doping level of silicon lithography mask membranes which, during their manufacture, are doped with, say, boron as an etch stop. The proposed measuring method uses the effect that the boron dopant leads to tensile stress in the doped silicon membrane. The doping level and the homogeneity of doping, i.e., the doping magnitude and its variation over the membrane surface, determine the stress parameters.