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Negative Ion Sputter Deposition Apparatus

IP.com Disclosure Number: IPCOM000058002D
Original Publication Date: 1988-Aug-01
Included in the Prior Art Database: 2005-Feb-15

Publishing Venue

IBM

Related People

Authors:
Bumble, B [+details]

Abstract

A technique is described whereby a negative ion sputter deposition apparatus provides an improvement for controlling the deposition of thin films, as used in the electronics industry. The apparatus is constructed so as to enable higher deposition rates for material systems which produce large amounts of negative ions, during sputtering deposition. (Image Omitted) In the deposition of thin films, using sputtering processes, difficulty is often experienced due to the production of negative ions in the plasma. Negative ions formed at the target are accelerated by the dark space potential toward the substrate. It has been demonstrated that etching of the substrate by the negative ions can occur, for certain systems of target material, sputtering gas, and process conditions.