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Forming Ohmic P-N Interlayer Contact in Semiconductor Junctions

IP.com Disclosure Number: IPCOM000058040D
Original Publication Date: 1988-Aug-01
Included in the Prior Art Database: 2005-Feb-15

Publishing Venue

IBM

Related People

Authors:
Solomon, PM Wright, SL [+details]

Abstract

A technique is described whereby an intermediate layer of small bandgap material provides good ohmic contact between stacked P-N semiconductor layers. The concept describes the use of (In,Ga)As as an intermediate layer of smaller band-gap material in the formation of the ohmic contact, so as to reduce the dependency of heavy doping techniques. Molecular-beam epitaxy (MBE) or organo-metallic chemical vapor deposition (MOCVD) growth techniques are typically used to grow N and P type layers, stacked on top of each other, so as to formulate P-N semiconductor junctions. Certain applications, of the P-N type junctions, require ohmic contact between the layers, such as tandem solar cells and certain complementary circuits.