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Si ADDITIONS TO PREVENT REPRECIPITATION INTO SCHOTTKY BARRIER DIODES AND SPIKING OF HIGH TEMPERATURE DIFFUSION BARRIERS

IP.com Disclosure Number: IPCOM000058116D
Original Publication Date: 1988-Sep-01
Included in the Prior Art Database: 2005-Feb-15

Publishing Venue

IBM

Related People

Authors:
Emmons, DF Gajda, JJ Schnitzel, RH Walsh, RH Wilson, HR [+details]

Abstract

A process change has been suggested which, combined with a N2 venting cycle, would add Si to the Al-Cu wiring in semiconductor devices to suppress wafer Si from diffusing into the Al or Al-Cu. The proposal would minimize Schottky barrier diode (SBD) degradation which occurs at high temperatures due to Al spiking/penetration of the Cr diffusion barrier. In manufacturing semiconductor devices problems arise because of Si reprecipitation into device contacts, such as SBDs upon cooling or during processing. Such depositions can increase SBD barrier heights and may cause high contact resistance. To prevent the foregoing from taking place, it is the practice to deposit films, such as PtSi, in the contacts and to include a water bleed Cr diffusion barrier.