Method of Accurately Measuring Electrical Non-Uniformities in Anisotropic Dry Etch Systems
Original Publication Date: 1988-Sep-01
Included in the Prior Art Database: 2005-Feb-15
A method is described which allows measuring electrical non-uniformities, i.e., deviations from ion trajectories orthogonal to the substrate, in ion enhanced etch processes, such as plasma etching, reactive ion etching, reactive ion beam etching, ECR (electron cyclotron resonance) plasmas, etc. The angular resolution of the method is an order of magnitude better than one degree. The uniformity of electrical field lines relative to the direction of the electrical field may be affected by geometric deviations from the planarity of the cathode, leading to a bending of the equipotential surfaces and thus to a non-orthogonal course of the ion trajectories.