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Dynamic Word Select Circuit Disclosure Number: IPCOM000058233D
Original Publication Date: 1988-Sep-01
Included in the Prior Art Database: 2005-Feb-15

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Wendel, DF Wiedmann, SK [+details]


Faster word select speed in a static random-access memory is achieved with a voltage swing of approximately 500 mV on the work line provided by a low ohmic switch. (Image Omitted) A low power word line select circuit is shown in Fig. 1 and its word line voltage signal in Fig. 2. During the initial select period, where t