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N-TYPE RESISTORS IN GaAs HBT TECHNOLOGY

IP.com Disclosure Number: IPCOM000058342D
Original Publication Date: 1988-Oct-01
Included in the Prior Art Database: 2005-Feb-15

Publishing Venue

IBM

Related People

Authors:
Jambotkar, CG [+details]

Abstract

This disclosure utilizes resist patterns for preserving N resistor regions during P+ doping of semiconductor devices in conjunction with heterojunction bipolar transistor (HBT) fabrication.