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Barrier for Preventing Titanium Silicide Oxidation During Glass Reflow

IP.com Disclosure Number: IPCOM000058470D
Original Publication Date: 1988-Nov-01
Included in the Prior Art Database: 2005-Feb-15

Publishing Venue

IBM

Related People

Authors:
Spielberg, AC [+details]

Abstract

A method of reflowing Boron Phosphorous Silicon Glass (BPSG) on top of a titanium silicide is described. A layer of chemical vapor deposited (CVD) silicon oxide 12 is deposited on the titanium silicide 10. A layer of CVD silicon 14 of appropriate thickness is deposited on oxide layer 12, and the BPSG 16 is deposited thereon (Fig. 1). The silicon layer 14 protects the titanium silicide 10 during the BPSG reflow. The thickness of silicon layer 14 is chosen so that the silicon will be completely consumed (i.e., oxidized) during the BPSG reflow cycle. The composite silicon oxide layer 18 (Fig. 2), thus formed, remains at the completion of the BPSG reflow cycle.