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Method of Detecting Defects in LPCVD Silicon Nitride Layers on Conductive Substrates

IP.com Disclosure Number: IPCOM000058475D
Original Publication Date: 1988-Nov-01
Included in the Prior Art Database: 2005-Feb-15

Publishing Venue

IBM

Related People

Authors:
Faix, W Kaercher, R Mueller, K Schramm, W [+details]

Abstract

Under oxidizing conditions, defects caused by organic contaminants form HF etchable paths penetrating the nitride layer. After etching and aluminum deposition on the silicon nitride, the defects are identified by BV measurements. The silicon nitride layer is produced by LPCVD (Low-Pressure Chemical Vapor Deposition) on a conductive or semiconductive substrate, optionally with a layer of silicon dioxide underlying the nitride layer. Organic contaminants reaching the growing layer react with the silicon source according to the equation (1) SiH2Cl2 + organic contaminant T Si(1-x)NC(x). Under conditions where silicon nitride is oxidized, the reaction product of (1) reacts in three ways, forming SiO2, Si(x)O(y) and Si(1-x)C(x).