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Characterization of Implanted Arsenic Ions Using X-Ray Fluorescence Disclosure Number: IPCOM000058518D
Original Publication Date: 1988-Nov-01
Included in the Prior Art Database: 2005-Feb-15

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Degraeve, B Roussy, F [+details]


In recent years, requirements for the manufacture of larger diameter wafers with higher throughputs have led to the maintenance of an acceptable level of dose reproducibility which, in turn, resulted in a strong need for characterization in real time in the course of the manufacturing process. One of the characterization methods used to control implanted arsenic ions is X-ray fluorescence (XRF). Usually, the XRF measures the highest intensity line, but the main problem when using a K alpha or K beta line is the interference of extra peaks. The crystallographic orientation has a high influence on the arsenic analysis and the position in the XRF beam should be taken in account. The XRF tool used by manufacturing people cannot accept a full wafer. Therefore, the wafer has to be cut into small samples of 3x3 cm size.