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Characterization of Implanted Arsenic Ions Using X-Ray Fluorescence

IP.com Disclosure Number: IPCOM000058518D
Original Publication Date: 1988-Nov-01
Included in the Prior Art Database: 2005-Feb-15

Publishing Venue

IBM

Related People

Authors:
Degraeve, B Roussy, F [+details]

Abstract

In recent years, requirements for the manufacture of larger diameter wafers with higher throughputs have led to the maintenance of an acceptable level of dose reproducibility which, in turn, resulted in a strong need for characterization in real time in the course of the manufacturing process. One of the characterization methods used to control implanted arsenic ions is X-ray fluorescence (XRF). Usually, the XRF measures the highest intensity line, but the main problem when using a K alpha or K beta line is the interference of extra peaks. The crystallographic orientation has a high influence on the arsenic analysis and the position in the XRF beam should be taken in account. The XRF tool used by manufacturing people cannot accept a full wafer. Therefore, the wafer has to be cut into small samples of 3x3 cm size.