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Negative Resistance Device Disclosure Number: IPCOM000058674D
Original Publication Date: 1988-Dec-01
Included in the Prior Art Database: 2005-Feb-15

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Chang, LL Munekata, H [+details]


A negative resistance in a semiconductor tunneling structure resulting from a decrease in tunneling exponent with applied voltage can be made in a heterostructure of InAs, GaSb and GaAs. The structure is shown in the figure correlated with an energy level scale. In the figure, (a) shows the schematic arrangement of two InAs electrodes, sandwiching a GaAs layer as the tunneling barrier. The InAs is n-type, wether it is unintentionally, intentionally or modulation doped. The band-edge relationship as shown is estimated from the literature. Although it is not precisely known, the energy range of consideration is clearly in the lower half of the band gap of GaAs. The tunneling current is proportional to the tunneling exponent, e-g, where g is given by -2 kzdz, z being the direction perpendicular to the surface.