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Metal Seam Defect Detection Technique

IP.com Disclosure Number: IPCOM000058708D
Original Publication Date: 1988-Dec-01
Included in the Prior Art Database: 2005-Feb-15

Publishing Venue

IBM

Related People

Authors:
Gajda, JJ Trudeau, FG [+details]

Abstract

A multiple-etch technique has been developed for quickly determining the quality of the first level metallurgy coverage in semiconductor devices at severe nitride/recessed oxide isolation (ROI) steps. The proposed method of sample analysis requires minimum analyst/operator training and provides a rapid, repeatable result. (Image Omitted) Vacuum conditions during Al deposition on semiconductor structures may have a significant impact on the quality of the metal coverage formed at large steps within the metal structure, such as ROI defined contacts 1. Step coverage can be adversely affected during subsequent processing steps. This may result in discontinuities, creating reliability problems at contacts (Fig. 1).