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Borderless Contact With Metal-0 Level Wiring and Positive Strap

IP.com Disclosure Number: IPCOM000058732D
Original Publication Date: 1988-Dec-01
Included in the Prior Art Database: 2005-Feb-15

Publishing Venue

IBM

Related People

Authors:
Cronin, JE Kaanta, CW Kenney, DM Parries, PC [+details]

Abstract

A method is shown for fabricating both a borderless contact and a positive trench strap connection simultaneously utilizing a new semiconductor fabrication sequence. Borderless contacts are desirable VLSI features, allowing more freedom of choice in insulator thickness and can, if necessary, provide a robust strap connection and/or metal-0 level wiring in one operation. A new metallization process sequence follows: 1. Referring to Fig. 1, a thick layer of photoresist (resist) is deposited on top of a semiconductor transistor topography, imaged and developed. Next a thick conformal layer of oxide is deposited on top of the developed photoresist. Contact formation is shown on the left, while a strap connection is being formed on the right. 2. Fig.