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Accelerated Etching of Silicon in Anisotropic Ethylene Diamine-Water- Pyrazine-Pyrocathecol Bath Disclosure Number: IPCOM000058815D
Original Publication Date: 1988-Dec-01
Included in the Prior Art Database: 2005-Feb-15

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Uzoh, CE [+details]


This article describes a process which reduces the time required to fabricate B-dope silicon membranes and reduces the incidence of thinning of membranes at the edges. The process disclosed herein reduces the time required to preferentially etch silicon (Si) (100) or fabricate a boron-doped Si membrane in a mixture of ethylene-diamine-water-pyrazine-pyrocathecol complex or other anisotropic etching solutions. This accelerated method is particularly beneficial in two ways, namely: (1) The reduction of the total time required to preferentially etch silicon (100) wafer or fabricated boron-doped silicon mask by at least 20% over conventional methods.