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Avoidance of Silicon-Carbide Formation in Rapid Thermal Processing

IP.com Disclosure Number: IPCOM000058823D
Original Publication Date: 1988-Dec-01
Included in the Prior Art Database: 2005-Feb-15

Publishing Venue

IBM

Related People

Authors:
Oehrlein, GS Ransom, CM [+details]

Abstract

This article describes a technique whereby silicon-carbide (SiC) formation which is formed on silicon surfaces during rapid thermal processing is avoided, thereby preventing the degradation of electrical properties of a subsequently formed Si device. Rapid thermal processing using tungsten-halogen lamp systems or other rapid heating sources has become an important technology in very large-scale integration (VLSI) processing. It is routinely used to anneal ion implantation damage in order to avoid significant profile redistribution. Because of the short heating times involved, and the associated short activation of most thermal processes which may be undesirable (diffusion of dopants, heavy metal contamination, extended defect formation, etc.