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An Improved Method for Producing Cubic Silicon Carbide Semiconductors

IP.com Disclosure Number: IPCOM000058864D
Original Publication Date: 1988-Jan-01
Included in the Prior Art Database: 2005-Feb-15

Publishing Venue

IBM

Related People

Authors:
Campagna, FJ [+details]

Abstract

A process for the production of large-area single-crystal wafers for semiconductor devices which involves growing a single-crystal layer of cubic silicon carbide (SiC) on a single-crystal silicon (Si) wafer by chemical-vapor deposition (CVD). Applications include electronics for high temperatures and electronics for very high frequencies.