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Underground Capacitor Construction Memory Devices Disclosure Number: IPCOM000058872D
Original Publication Date: 1988-Jan-01
Included in the Prior Art Database: 2005-Feb-15

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Hsu, L Zingerman, J [+details]


The current disadvantages of high temperature recessed oxidation (ROX) "bird's beak" dimensional control and accumulated topography in the manufacture of metal oxide silicon (MOS) memory devices can be overcome by the use of isolation trench technology, reverse polysilicon capacitor etching and chemical/mechanical etch back planarization.