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Underground Capacitor Construction Memory Devices

IP.com Disclosure Number: IPCOM000058872D
Original Publication Date: 1988-Jan-01
Included in the Prior Art Database: 2005-Feb-15

Publishing Venue

IBM

Related People

Authors:
Hsu, L Zingerman, J [+details]

Abstract

The current disadvantages of high temperature recessed oxidation (ROX) "bird's beak" dimensional control and accumulated topography in the manufacture of metal oxide silicon (MOS) memory devices can be overcome by the use of isolation trench technology, reverse polysilicon capacitor etching and chemical/mechanical etch back planarization.