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Selective Cvd Via Stud Fabrication Process

IP.com Disclosure Number: IPCOM000058914D
Original Publication Date: 1988-Feb-01
Included in the Prior Art Database: 2005-Feb-15

Publishing Venue

IBM

Related People

Authors:
Cronin, J Kaanta, C Leach, M Lee, P [+details]

Abstract

This article relates to the fabrication of a silicon spacer reactant for selective chemical vapor deposition (CVD) of a metal when filling a semiconductor via hole.