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A High Density Random Access Memory Cell Adapted to Level Sense Scan Design Test Methods

IP.com Disclosure Number: IPCOM000058930D
Original Publication Date: 1988-Feb-01
Included in the Prior Art Database: 2005-Feb-15

Publishing Venue

IBM

Related People

Authors:
Jallice, DL Lawson, D Murray, D [+details]

Abstract

A high density random access memory (RAM) cell is shown which can be tested utilizing level sense scan design (LSSD) techniques.