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An Etch Process With High Sio2 to Si3n4 Etch Selectivity

IP.com Disclosure Number: IPCOM000058938D
Original Publication Date: 1988-Feb-01
Included in the Prior Art Database: 2005-Feb-15

Publishing Venue

IBM

Related People

Authors:
Arroyo, M Stanasolovich, D [+details]

Abstract

The following etch process can achieve high silicon dioxide to silicon nitride etch rate ratio. 1. Provide a silicon wafer 10 having a field oxide region 12 and polysilicon line 14 defined. 2. Apply a conformal layer of silicon nitride 16. 3. Apply a planarizing layer of borophosphosilicate glass (BPSG) 18. 4. Apply a layer of photoresist 20. 5. Lithographically define a contact area 22 in the photoresist 20. 6. Develop the contact area 22 in resist layer 20. 7. Etch the BPSG layer 18 with BCl3 .