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Method of Controlling Oxygen Concentration During Deposition Of Silicon Oxynitride Films

IP.com Disclosure Number: IPCOM000059024D
Original Publication Date: 1988-Apr-01
Included in the Prior Art Database: 2005-Feb-15

Publishing Venue

IBM

Related People

Authors:
Courchaine, RJ Nguyen, SV Puttlitz, AF [+details]

Abstract

By introducing N2O gas at a controlled rate during plasma enhanced chemical vapor deposition (PECVD) of silicon oxynitride, the concentration of oxygen is controlled in the deposited film. Since film etch rate is an inverse function of the oxygen content, etched edge slope control is achieved by varying N2O flow appropriately during film deposition and using an etching process which has a horizontal as well as a vertical etch component.