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Process for Improving Oxidation Behavior of Etched Edges of Tungsten Silicide

IP.com Disclosure Number: IPCOM000059090D
Original Publication Date: 1988-May-01
Included in the Prior Art Database: 2005-Feb-15

Publishing Venue

IBM

Related People

Authors:
Deeter, T Spielberg, A [+details]

Abstract

Annealing films of previously annealed tungsten silicide (WSi2) in a non-oxidizing ambient (e.g. argon) at elevated temperature for a short time following reactive ion etching (RIE) and before any oxidizing treatment avoids occurence of irregular film edge oxidation and catastrophic failure of narrow WSi2 lines during any subsequent oxidizing treatment.