Process for Improving Oxidation Behavior of Etched Edges of Tungsten Silicide
Original Publication Date: 1988-May-01
Included in the Prior Art Database: 2005-Feb-15
Annealing films of previously annealed tungsten silicide (WSi2) in a non-oxidizing ambient (e.g. argon) at elevated temperature for a short time following reactive ion etching (RIE) and before any oxidizing treatment avoids occurence of irregular film edge oxidation and catastrophic failure of narrow WSi2 lines during any subsequent oxidizing treatment.