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Process for Selective Chemical Vapor Deposition of Tungsten Studs

IP.com Disclosure Number: IPCOM000059091D
Original Publication Date: 1988-May-01
Included in the Prior Art Database: 2005-Feb-15

Publishing Venue

IBM

Related People

Authors:
Abernathy, JR Cronin, JE Hartswick, TJ Kaanta, CW Lee, PP Parries, PC [+details]

Abstract

By means of sputtering seed material from bottom to sidewalls of a via hole prior to selective chemical vapor deposition (CVD) of tungsten (W), the selective CVD process for making W stud interconnections takes less time and eliminates reliability concerns.