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Improved Device Isolation Through Controlled Boron Outdiffusion Disclosure Number: IPCOM000059115D
Original Publication Date: 1988-May-01
Included in the Prior Art Database: 2005-Feb-15

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Schnur, SG Spencer, OS [+details]


This article describes methods for altering the field doping between active devices on a semiconductor chip. Further, the doping profile obtained in the manner described extends deeper into the wafer surface, giving more protection against both radiation and latch-up than other isolation processes.