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This invention is for an anneal-furnace modification. In this device there is an inlet port for cool, inert gas (N2 in this case) to be used to purge the furnace and product area.
English (United States)
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Low Oxygen Content Device for Wafer Thin-Film Anneal Furnace
This invention is for an anneal-furnace modification. In this device there is an
inlet port for cool, inert gas (N2 in this case) to be used to purge the furnace and
This furnace has inlet ports (N2 ports #1 and #2 for an inert, low-oxygen-
content purge gas. One of these ports (#1) is located at the end of the furnace,
such that the gas, after entering the furnace, heats up in the heater zone of the
furnace. The other port is located after the heated zone of the furnace. Before
an oxygen-sensitive product is placed in the anneal furnace, the purge gases are
adjusted such that the cool gas from port #2 leaves the exit port. While the
product is in the cool zone, the oxygen content of the furnace is reduced by
flushing the furnace with gas from port #2.
After the desired oxygen content is achieved, the product is placed in the
heated zone and annealed. The gas flows are now changed such that port #1
supplies most of the purge gas to the furnace and the product is annealed.
After an anneal cycle, the product is moved to the cool zone and the gas
flows are changed such that the gas from port #2 supplies most of the gas during
the cooling cycle.