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Amorphous Insulator Having High Dielectric Constant

IP.com Disclosure Number: IPCOM000059197D
Original Publication Date: 1988-Jun-01
Included in the Prior Art Database: 2005-Feb-15

Publishing Venue

IBM

Related People

Authors:
Ray, AK [+details]

Abstract

An improved insulator for high density memory cell trench capacitors is achieved by co-depositing insulative oxides of different dielectric constants, band gaps and crystallization temperatures.