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Self-Aligning Doping Process Using Oxidized Dopants

IP.com Disclosure Number: IPCOM000059198D
Original Publication Date: 1988-Jun-01
Included in the Prior Art Database: 2005-Feb-15

Publishing Venue

IBM

Related People

Authors:
Liehr, M Wachnik, RA [+details]

Abstract

Self-aligned, shallow pn-junctions on silicon having high dopant concentrations can be achieved with fewer process steps by depositing oxidized forms of dopants on patterned wafers with subsequent annealing.