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Self-Aligning Doping Process Using Oxidized Dopants Disclosure Number: IPCOM000059198D
Original Publication Date: 1988-Jun-01
Included in the Prior Art Database: 2005-Feb-15

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Liehr, M Wachnik, RA [+details]


Self-aligned, shallow pn-junctions on silicon having high dopant concentrations can be achieved with fewer process steps by depositing oxidized forms of dopants on patterned wafers with subsequent annealing.