Browse Prior Art Database

Reduction of Direct Tunneling

IP.com Disclosure Number: IPCOM000059208D
Original Publication Date: 1988-Jun-01
Included in the Prior Art Database: 2005-Feb-15

Publishing Venue

IBM

Related People

Authors:
Weinberg, ZA [+details]

Abstract

Unwanted leakage through gate oxides of MOSFET devices due to direct tunneling at low gate voltages can be reduced by depositing an auxiliary layer over the gate oxide.