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Unwanted leakage through gate oxides of MOSFET devices due to direct tunneling at low gate voltages can be reduced by depositing an auxiliary layer over the gate oxide.
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Reduction of Direct Tunneling
Unwanted leakage through gate oxides of MOSFET devices due to direct
tunneling at low gate voltages can be reduced by depositing an auxiliary layer
over the gate oxide.
The thin auxiliary layer is deposited onto the gate oxide and is selected to: 1)
be conductive so as to not increase gate resistance or capacitance; 2) provide a
band-structure that gives maximum mismatch for the tunneling process to
achieve maximum leakage reduction; and 3) have a thickness of only one or two
monolayers, since it operates through quantum mechanical mismatch of wave
functions and not on bulk properties. Mismatch can be provided by material with
a low density of states in the region of wavefunction tunneling or by mismatch of
wavevectors as much as possible. Principal appropriate materials are
semimetals, such as bismuth, or a hole-metal, such as cobalt silicon.