Browse Prior Art Database

Tungsten Gate Processing for Metal Oxide Silicon Field Effect Transistor (MOSFET) Construction

IP.com Disclosure Number: IPCOM000059218D
Original Publication Date: 1988-Jul-01
Included in the Prior Art Database: 2005-Feb-15

Publishing Venue

IBM

Related People

Authors:
Lastra, BA Pan, P Paquette, CA Roberts, S [+details]

Abstract

Forming gas (10% H2, 90%N2) is used to prevent oxidation of tungsten (W) during hot processing. By controlling partial pressure of water vapor in the forming gas, exposed silicon (Si) and/or Si under W is oxidized at a controlled rate.