Tungsten Gate Processing for Metal Oxide Silicon Field Effect Transistor (MOSFET) Construction
Original Publication Date: 1988-Jul-01
Included in the Prior Art Database: 2005-Feb-15
Forming gas (10% H2, 90%N2) is used to prevent oxidation of tungsten (W) during hot processing. By controlling partial pressure of water vapor in the forming gas, exposed silicon (Si) and/or Si under W is oxidized at a controlled rate.