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Indium arsenide, having high intrinsic electron mobility and a metal Fermi level pinning position in the conduction band, can be used as a semiconductor for a family of VLSI complementary logic devices.
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Complementary Devices Using Indium Arsenide
Indium arsenide, having high intrinsic electron mobility and a metal Fermi
level pinning position in the conduction band, can be used as a semiconductor
for a family of VLSI complementary logic devices.
In Fig. 1, InAs semiconductor 1 uses aluminum-antimony as a confinement
layer 2 for the gate 3 between source 4 and drain 5. This provides a confining
layer equal to the desired leV. or greater. Gate contact 3 can be a metal for a
Schottky gate or more indium arsenide. Ohmic contacts for source 4 and drain 5
can be any convenient metallurgy. The device does not need to be self-aligned
since the air-exposed indium arsenide gives rise to a two-dimensional electron
gas between the gate and source drain.
A complementary device for the normally off device in Fig. 1 is shown in Fig.
2, that is normally on and is a standard inversion layer MOSFET. The latter
consists of a metal 6 gate on an oxide 7 on the same indium arsenide
semiconductor 8 having source 9 and drain 10.