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Complementary Devices Using Indium Arsenide

IP.com Disclosure Number: IPCOM000059266D
Original Publication Date: 1988-Jul-01
Included in the Prior Art Database: 2005-Feb-15

Publishing Venue

IBM

Related People

Authors:
Freeouf, JL [+details]

Abstract

Indium arsenide, having high intrinsic electron mobility and a metal Fermi level pinning position in the conduction band, can be used as a semiconductor for a family of VLSI complementary logic devices.