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Sidewall Process for MBE Regrowth

IP.com Disclosure Number: IPCOM000059268D
Original Publication Date: 1988-Jul-01
Included in the Prior Art Database: 2005-Feb-15

Publishing Venue

IBM

Related People

Authors:
Baratte, H Marks, RF Wright, SL [+details]

Abstract

Oxide surfaces on gallium arsenide pedestal structures can be rendered suitable for molecular beam epitaxial (MBE) regrowth by removing gallium-rich oxides from only the horizontal surfaces via dry etching and leaving those oxides intact on the sidewalls.