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Fabrication of Refractory Electrode Edge Junctions Disclosure Number: IPCOM000059269D
Original Publication Date: 1988-Jul-01
Included in the Prior Art Database: 2005-Feb-15

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Related People

Raider, SI [+details]


Planar and edge junctions of Josephson devices with refractory electrodes can be fabricated with improved stability and less aluminum diffusion than in niobium/aluminum/aluminum oxide/niobium structures by either coevaporating aluminum with niobium or by depositing a thin aluminum layer beneath the niobium base electrode. Low concentrations of aluminum (or magnesium) coevaporated with niobium getter impurities in the niobium without degrading the superconducting properties.