Browse Prior Art Database

Fabrication of Refractory Electrode Edge Junctions

IP.com Disclosure Number: IPCOM000059269D
Original Publication Date: 1988-Jul-01
Included in the Prior Art Database: 2005-Feb-15

Publishing Venue

IBM

Related People

Authors:
Raider, SI [+details]

Abstract

Planar and edge junctions of Josephson devices with refractory electrodes can be fabricated with improved stability and less aluminum diffusion than in niobium/aluminum/aluminum oxide/niobium structures by either coevaporating aluminum with niobium or by depositing a thin aluminum layer beneath the niobium base electrode. Low concentrations of aluminum (or magnesium) coevaporated with niobium getter impurities in the niobium without degrading the superconducting properties.