Tunnel Injector With Low Injection Voltage
Original Publication Date: 1988-Jul-01
Included in the Prior Art Database: 2005-Feb-15
Larger tunnelling currents at low injection voltages in tunnelling hot electron transfer amplifier (THETA) devices can be obtained by incorporating a layer rich in donors between the tunnelling barrier at the emitter-base interface and the lightly- doped base. The donor-rich layer is thin, about 10Ao, with a planar doping of approximately (2-4)1012/CM2 . This construction minimizes scattering due to the short transit time through this planar doping, and current onset due to tunnelling occurs at low voltages by eliminating a large depletion layer in the base.