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Tunnel Injector With Low Injection Voltage

IP.com Disclosure Number: IPCOM000059270D
Original Publication Date: 1988-Jul-01
Included in the Prior Art Database: 2005-Feb-15

Publishing Venue

IBM

Related People

Authors:
Dumke, WP Heiblum, M [+details]

Abstract

Larger tunnelling currents at low injection voltages in tunnelling hot electron transfer amplifier (THETA) devices can be obtained by incorporating a layer rich in donors between the tunnelling barrier at the emitter-base interface and the lightly- doped base. The donor-rich layer is thin, about 10Ao, with a planar doping of approximately (2-4)1012/CM2 . This construction minimizes scattering due to the short transit time through this planar doping, and current onset due to tunnelling occurs at low voltages by eliminating a large depletion layer in the base.