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Metal Base Transistor With Oxide Injector

IP.com Disclosure Number: IPCOM000059271D
Original Publication Date: 1988-Jul-01
Included in the Prior Art Database: 2005-Feb-15

Publishing Venue

IBM

Related People

Authors:
Batey, J DiMaria, DJ Iyer, S Tierney, E [+details]

Abstract

A metal base transistor having improved injection and collector efficiences with stable base transport can be fabricated by forming the emitter adjacent to the base with a thin, low temperature, deposited oxide. This technique enables hotter ballistic electrons to be injected into a metal or semiconductor base over a wide range of energies from 0 to 4eV, depending on emitter-base voltage bias.