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Laser Ablation for Patterning High Tc Superconducting Materials

IP.com Disclosure Number: IPCOM000059278D
Original Publication Date: 1988-Jul-01
Included in the Prior Art Database: 2005-Feb-15

Publishing Venue

IBM

Related People

Authors:
Braren, B Chi, CC Scheuermann, M Srinivasan, R Tsuei, CC [+details]

Abstract

Lithographic patterning of the new high Tc superconducting materials has proved to be somewhat difficult. Several techniques have been tried with limited success, due to the high temperature anneal required to form the high Tc phase and the relative large size of the crystals. Patterning fine lines using conventional lithography and wet processing has not been successful because lines tend to become discontinuous due to preferential etching along the grain boundaries if the lines are patterned after the high temperature anneal. However, if the lines are patterned before the high temperature anneal, the kinetics of the crystal growth process again cause fine lines to become discontinuous. Reactive ion etching has not been investigated in detail but preliminary results have not been succesful.