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Controllable Base-Collector Barrier Height Disclosure Number: IPCOM000059334D
Original Publication Date: 1988-Aug-01
Included in the Prior Art Database: 2005-Feb-16

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Heilblum, M Kleinsasser, AW Woodall, JM [+details]


The base collector barrier height of a metal base transistor can be variably constructed by replacing the usual metal-insulator- metal structure with a metal-semiconductor structure and selecting an appropriate semiconductor composition to provide a Schottky barrier.