Browse Prior Art Database

Controllable Base-Collector Barrier Height

IP.com Disclosure Number: IPCOM000059334D
Original Publication Date: 1988-Aug-01
Included in the Prior Art Database: 2005-Feb-16

Publishing Venue

IBM

Related People

Authors:
Heilblum, M Kleinsasser, AW Woodall, JM [+details]

Abstract

The base collector barrier height of a metal base transistor can be variably constructed by replacing the usual metal-insulator- metal structure with a metal-semiconductor structure and selecting an appropriate semiconductor composition to provide a Schottky barrier.