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Gallium Arsenide Gate Transfer Disclosure Number: IPCOM000059336D
Original Publication Date: 1988-Aug-01
Included in the Prior Art Database: 2005-Feb-16

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Jackson, TN [+details]


Gate current leakage of gallium arsenide or gallium aluminum arsenide transistors at or near room temperatures due to thermionic field emission and tunneling can be reduced by forming the barrier region with alternate layers, each 50-150 Ao in thickness, of gallium arsenide and gallium aluminum arsenide. Although this technique does not increase the conduction band barrier height, it reduces tunneling current. The aluminum preferably represents approximately a one-third proportion. Aluminum arsenide is not as useful since heated electrons would easily tunnel.