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Incorporation of a Schottky barrier in ballistic and resonant tunneling transistors simplifies device fabrication and improves contact to the base.
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Schottky Barrier Tunnel Transistor
Incorporation of a Schottky barrier in ballistic and resonant tunneling
transistors simplifies device fabrication and improves contact to the base.
An n-type tunneling transistor is shown in Fig. 1 where a Schottky barrier 1 of
aluminum gallium arsenide of a thickness of approximately 10 nm is deposited
between gallium arsenide substrate 2 and top layer 3 of gallium arsenide
approximately 150 nm thick. Ohmic contact 4 contacts base region 5 and metal
collector 6 forms a parabolic barrier. The emitter contact 7 is made to the
backside of the wafer. The depletion width below the base electrode is controlled
by doping the gallium arsenide.
Bias configurations of the transistor are illustrated by the diagram of the
conduction band-edge, shown in Fig. 2. When the transistor is on with a small
negative bias applied to the base, represented by the solid line, current passes
directly from emitter to collector. When the base is positively biased, represented
by the dotted line, current is diverted to the base contact and current does not
flow to the collector because of the large tunneling barrier.