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Strain Control of Threshold Voltage

IP.com Disclosure Number: IPCOM000059339D
Original Publication Date: 1988-Aug-01
Included in the Prior Art Database: 2005-Feb-16

Publishing Venue

IBM

Related People

Authors:
Collins, RT Kuech, TF [+details]

Abstract

Threshold voltages other than approximately zero can be obtained with devices such as gallium arsenide field effect transistors by growing epitaxial layers having lattice mismatch with the underlying substrate to produce an internal electric field through a piezoelectric effect via a non-(100) crystallographic orientation.