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Electromigration problems in thin film wiring may be minimized by use of a series of uniform layers of Cu instead of two layers of Cu of different thicknesses.
English (United States)
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Redundancy for Eliminating Electromigration Problems
Electromigration problems in thin film wiring may be minimized by use of a
series of uniform layers of Cu instead of two layers of Cu of different thicknesses.
Under conventional practices, thin film wiring is composed of a 5m Cu layer
Fig. 1-1 and a 2m Cu layer 2 separated by a Cr barrier 3. If one layer has an
open, the difference in grain size, due to the differences in thickness between the
two layers, may cause a large flux divergence leading to electromigration.
The proposal suggests that the thin film wiring be composed of three Cu
layers Fig. 2-4 of equal thickness separated by Cr barriers 3. Since the Cu
layers are of equal thickness, their grain sizes will be the same and the condition
leading to electromigration will not exist. The triple redundancy in the structure
will alleviate any possible step coverage problems.