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Low Temperature Conversion of Titanium Silicide (TiSi2) to Titanium Nitride (TiN)

IP.com Disclosure Number: IPCOM000059476D
Original Publication Date: 1988-Nov-01
Included in the Prior Art Database: 2005-Feb-16

Publishing Venue

IBM

Related People

Authors:
Baxter, RT Mann, RW [+details]

Abstract

TiSi2 is converted to TiN by annealing at 700 degrees Celsius in an ammonia (NH3) environment. This relatively low temperature process is useful in creating a TiN surface layer which is 1) a good diffusion barrier, 2) a good electrical conductor, and 3) resistant to attack by dilute hydrofluoric acid (HF) and phosphoric acid (H3PO4).