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Contact Interface to Metallurgical Junction Series Resistance Structure

IP.com Disclosure Number: IPCOM000059483D
Original Publication Date: 1988-Nov-01
Included in the Prior Art Database: 2005-Feb-16

Publishing Venue

IBM

Related People

Authors:
Morrett, KE Potter, MD [+details]

Abstract

By means of a field ion implant for p-type device structures or an n-well implant for n-type device structures, contact is made to diffused silicon regions for four point probe measurement of electrical resistance between overlying metal and the diffused silicon.