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Method for Preparation of Monocrystalline Barium Fluoride Prior to Lead-Tin-Telluride Film Growth

IP.com Disclosure Number: IPCOM000059499D
Original Publication Date: 1988-Nov-01
Included in the Prior Art Database: 2005-Feb-16

Publishing Venue

IBM

Related People

Authors:
Anschel, M [+details]

Abstract

Single crystal semiconductor thin films of lead-tin-telluride, (PbSn)Te, are used as infrared photodiode detectors in the wavelength region of 3 to 14 microns. Barium fluoride substrates are generally used because of thermal coefficient of expansion (TCE) match, infrared transparency, inertness, etc.