Method for Preparation of Monocrystalline Barium Fluoride Prior to Lead-Tin-Telluride Film Growth
Original Publication Date: 1988-Nov-01
Included in the Prior Art Database: 2005-Feb-16
Single crystal semiconductor thin films of lead-tin-telluride, (PbSn)Te, are used as infrared photodiode detectors in the wavelength region of 3 to 14 microns. Barium fluoride substrates are generally used because of thermal coefficient of expansion (TCE) match, infrared transparency, inertness, etc.