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An Ion Implant Scheme to Produce a Lightly Doped Drain Effect In a GaAs Gate FET

IP.com Disclosure Number: IPCOM000059519D
Original Publication Date: 1988-Nov-01
Included in the Prior Art Database: 2005-Feb-16

Publishing Venue

IBM

Related People

Authors:
Baratte, H Frank, DJ La Tulipe, DC, Jr [+details]

Abstract

This article describes a lightly doped drain ion implant scheme which is used to produce gallium arsenide (GaAs) gate field effect transistors with low access resistance and improved electrical symmetry.