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Abrupt Implantation Profiles Using Controlled Dechannelling Disclosure Number: IPCOM000059520D
Original Publication Date: 1988-Nov-01
Included in the Prior Art Database: 2005-Feb-16

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Hodgson, RT Kirchner, PD Mayer, JW Warren, AC Woodall, JM [+details]


This article describes a technique wherein implantation into a heterostructure is performed in a channelling direction that is not normal to the substrate. Thin latticed-mismatched layers whose channelling directions differ from the host lattice are used to dechannel the implanted ions to yield tightly localized regions of implanted species and damage.