Abrupt Implantation Profiles Using Controlled Dechannelling
Original Publication Date: 1988-Nov-01
Included in the Prior Art Database: 2005-Feb-16
This article describes a technique wherein implantation into a heterostructure is performed in a channelling direction that is not normal to the substrate. Thin latticed-mismatched layers whose channelling directions differ from the host lattice are used to dechannel the implanted ions to yield tightly localized regions of implanted species and damage.